Light-emitting device, optical apparatus, optical measurement apparatus, and image forming apparatus

ABSTRACT

A light-emitting device includes a light-emitting unit. The light-emitting unit includes an array of multiple light-emitting element groups, each including multiple light-emitting elements. In the light-emitting unit, the multiple light-emitting element groups are sequentially driven along the array such that, for each of the multiple light-emitting element groups, the multiple light-emitting elements included in the light-emitting element group are concurrently set to a state of emitting light or a state of not emitting light.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is based on and claims priority under 35 USC 119 fromJapanese Patent Application No. 2019-010749 filed Jan. 25, 2019.

BACKGROUND (i) Technical Field

The present disclosure relates to a light-emitting device, an opticalapparatus, an optical measurement apparatus, and an image formingapparatus.

(ii) Related Art

Japanese Unexamined Patent Application Publication No. 01-238962describes a light-emitting element array. The light-emitting elementarray is configured such that a large number of light-emitting elementsfor which a threshold voltage or threshold current is controllable bylight from the outside are arranged one-dimensionally,two-dimensionally, or three-dimensionally and at least a portion oflight generated from each of the light-emitting elements is incident onanother nearby light-emitting element. The light-emitting elements areconnected to clock lines to apply voltage or current from the outside.

Japanese Unexamined Patent Application Publication No. 2001-308385describes a self-scanning light-emitting device. The self-scanninglight-emitting device includes light-emitting elements a pnpnpnsixth-layer semiconductor structure such that the p-type first layer andthe n-type sixth layer on both ends and the p-type third layer and then-type fourth layer at the center are provided with electrodes to allowthe pn layers to implement a light-emitting diode function and the pnpnfour layers to implement a thyristor function.

Japanese Unexamined Patent Application Publication No. 2009-286048describes a self-scanning light source head. The self-scanning lightsource head includes a substrate, surface emitting semiconductor lasersarranged in an array on the substrate, and a thyristor serving as aswitching element arranged on the substrate and configured toselectively turn on and off light emission of the surface emittingsemiconductor lasers.

SUMMARY

In a light-emitting device in which arranged light-emitting elements areset to a turn-on state or a turn-off state in order of arrangement toemit light, it is conceivable to increase the sizes of light-emittingpoints of the light-emitting elements to address insufficient opticaloutput from the light-emitting device. However, increasing the sizes ofthe light-emitting points of the light-emitting elements may result inimpaired uniformity of light emission or, when the light-emittingelements perform laser oscillation, due to the generation of ahigher-order mode, cause deterioration of the light emissioncharacteristics of the light-emitting elements, such as distortedlight-emission profiles or increased divergence angles.

Aspects of non-limiting embodiments of the present disclosure relate toa light-emitting device, an optical apparatus, an optical measurementapparatus, and an image forming apparatus that can provide increasedoptical output without deterioration of light emission characteristicswhich may be caused by increasing the sizes of light-emitting points oflight-emitting elements.

Aspects of certain non-limiting embodiments of the present disclosureaddress the above advantages and/or other advantages not describedabove. However, aspects of the non-limiting embodiments are not requiredto address the advantages described above, and aspects of thenon-limiting embodiments of the present disclosure may not addressadvantages described above.

According to an aspect of the present disclosure, there is provided alight-emitting device including a light-emitting unit. Thelight-emitting unit includes an array of a plurality of light-emittingelement groups, each including a plurality of light-emitting elements.In the light-emitting unit, the plurality of light-emitting elementgroups are sequentially driven along the array such that, for each ofthe plurality of light-emitting element groups, the plurality oflight-emitting elements included in the light-emitting element group areconcurrently set to a state of emitting light or a state of not emittinglight.

BRIEF DESCRIPTION OF THE DRAWINGS

Exemplary embodiments of the present disclosure will be described indetail based on the following figures, wherein:

FIG. 1 is an equivalent circuit diagram of a light-emitting deviceaccording to a first exemplary embodiment;

FIG. 2 illustrates an example of a plan view layout of thelight-emitting device according to the first exemplary embodiment;

FIG. 3 is a cross-sectional view of the light-emitting device, takenalong line of FIG. 2;

FIG. 4 is a cross-sectional view of the light-emitting device, takenalong line IV-IV of FIG. 2;

FIGS. 5A to 5C illustrate the operation of thyristors, in which FIG. 5Ais a cross-sectional view of a thyristor including no voltage reductionlayer, FIG. 5B is a cross-sectional view of a thyristor including avoltage reduction layer, and FIG. 5C illustrates characteristics of thethyristors;

FIG. 6 illustrates band gap energies of materials of semiconductorlayers;

FIGS. 7A to 7C illustrate the multi-layer structure of a settingthyristor and a laser diode, in which FIG. 7A is a schematic energy banddiagram of the multi-layer structure of the setting thyristor and thelaser diode, FIG. 7B is an energy band diagram of a tunnel junctionlayer in reverse bias, and FIG. 7C illustrates a current-voltagecharacteristic of the tunnel junction layer;

FIG. 8 illustrates an example time chart for controllingemission/non-emission of light from laser diodes of the light-emittingdevice;

FIGS. 9A to 9C illustrate arrangements of laser diodes included in alaser diode group, in which FIG. 9A illustrates a y-directionarrangement of the laser diodes, FIG. 9B illustrates a diagonalarrangement of the laser diodes relative to the x direction and the ydirection, and FIG. 9C illustrates a triangular arrangement of the laserdiodes;

FIG. 10 is an equivalent circuit diagram of a light-emitting deviceaccording to a second exemplary embodiment;

FIG. 11 illustrates an example of a plan view layout of thelight-emitting device according to the second exemplary embodiment;

FIG. 12 is a cross-sectional view of the light-emitting device, takenalong line XII-XII of FIG. 11;

FIG. 13 is a cross-sectional view of the light-emitting device, takenalong line XIII-XIII of FIG. 11;

FIG. 14 illustrates an optical apparatus according to a third exemplaryembodiment;

FIG. 15 illustrates an optical measurement apparatus including theoptical apparatus;

FIG. 16 illustrates how light beams are emitted from the opticalmeasurement apparatus; and

FIG. 17 illustrates an image forming apparatus including the opticalapparatus.

DETAILED DESCRIPTION

The following describes exemplary embodiments of the present disclosurein detail with reference to the accompanying drawings.

First Exemplary Embodiment

Light-Emitting Device 10

FIG. 1 is an equivalent circuit diagram of a light-emitting device 10according to a first exemplary embodiment. A control unit 20 thatcontrols the light-emitting device 10 is also illustrated in FIG. 1. InFIG. 1, a direction extending rightward is defined as the x direction.

The light-emitting device 10 includes a plurality of laser diodes LDthat emit beams of laser light. Each of the laser diodes LD is anexample of a light-emitting element. As described below, thelight-emitting device 10 is configured as a self-scanning light-emittingelement array (self-scanning light emitting device (SLED)). The laserdiodes LD are vertical cavity surface emitting laser (VCSEL) diodes, forexample. In the following, light-emitting elements are described aslaser diodes LD. Alternatively, light-emitting elements may be otherlight-emitting devices such as light-emitting diodes (LEDs).

The light-emitting device 10 includes a plurality of laser diode LDgroups, each including a plurality of laser diodes LD. In FIG. 1, eachlaser diode LD group includes four laser diodes LD, by way of example.In the following, the laser diode LD groups are represented as laserdiode LD groups #1, #2, #3, etc. or simply as #1, #2, #3, etc. The laserdiode LD groups that are not distinguished from each other arerepresented as the laser diode LD groups or as the laser diode LD groupsi (i is an integer greater than or equal to 1). While four laser diodeLD groups are illustrated in FIG. 1, the number of laser diode LD groupsmay be other than four.

Each of the laser diode LD groups is an example of a light-emittingelement group. The laser diode LD groups may be sometimes represented aslaser diode groups.

The light-emitting device 10 includes a setting thyristor S for each ofthe laser diodes LD. Each of the laser diodes LD and the correspondingone of the setting thyristors S are connected in series.

Here, the laser diodes LD included in the laser diode LD group #1 arerepresented as laser diodes LD11 to LD14, and the laser diodes LDincluded in the laser diode LD group #2 are represented as laser diodesLD21 to LD24. In a laser diode LDij (j is an integer greater than orequal to 2), “i” denotes the number of a laser diode LD group and “j”denotes the number of a laser diode LD in the laser diode LD group. Thesetting thyristors S are also assigned numerals in a similar way. Thatis, the setting thyristor S provided for the laser diode LD11 isrepresented as a setting thyristor S11. In the example illustrated inFIG. 1, j ranges from 1 to 4. In the following, a description will bemade, assuming that j ranges from 1 to 4. In FIG. 1, each of the laserdiode LD groups includes the same number of laser diodes LD. However,each of the laser diode LD groups may include a different number oflaser diodes LD. The number (j) of laser diodes LD in each of the laserdiode LD groups may be two or more.

As used herein, the term “A to B”, where A and B are numbers, is used toindicate a plurality of elements that are individually identified withnumbers ranging from A to B, both inclusive. For example, the laserdiodes LD11 to LD14 include the laser diode LD11, the laser diode LD12,the laser diode LD13, and the laser diode LD14.

The light-emitting device 10 further includes a plurality of transferthyristors T, a plurality of coupling diodes D, a plurality of powersupply line resistors Rg, a start diode SD, and current-limit resistorsR1 and R2. To distinguish the plurality of transfer thyristors T fromeach other, the plurality of transfer thyristors T are assigned numbers,such as transfer thyristors T1, T2, and T3. The same applies to thecoupling diodes D and the power supply line resistors Rg. As describedbelow, the transfer thyristor T1 is disposed so as to be associated withthe laser diode LD group #1. Thus, a transfer thyristor Ti is associatedwith the laser diode LD group assigned the number i. Thus, a transferthyristor Ti is sometimes used. The same applies to the coupling diodesD and the power supply line resistors Rg.

The number of transfer thyristors T in the light-emitting device 10 maybe determined in advance. For example, 128 transfer thyristors T, 512transfer thyristors T, or 1024 transfer thyristors T may be used. InFIG. 1, a portion corresponding to the transfer thyristors T1 to T4 isillustrated. The number of transfer thyristors T may be the same as thenumber (i) of laser diode LD groups. It should be noted that the numberof transfer thyristors T may exceed or be less than the number (i) oflaser diode LD groups.

The transfer thyristors T are arranged in the x direction in the orderof the transfer thyristors T1, T2, T3, etc. The coupling diodes D arearranged in the x direction in the order of the coupling diodes D1, D2,D3, etc. The coupling diode D1 is disposed between the transferthyristor T1 and the transfer thyristor T2. The same applies to theother coupling diodes D. The power supply line resistors Rg are alsoarranged in the x direction in the order of the power supply lineresistors Rg1, Rg2, Rg3, etc.

The laser diodes LD and the coupling diodes D are two-terminal elementseach including an anode and a cathode. The setting thyristors S and thetransfer thyristors T are three-terminal elements each including ananode, a cathode, and a gate. The gate of each of the transferthyristors T is represented as gate Gt, and the gate of each of thesetting thyristors S is represented as gate Gs. To distinguish them fromeach other, they are assigned the sign “i” in a way similar to thatdescribed above.

A portion constituted by the laser diodes LD is referred to as alight-emitting unit 102, and a portion constituted by the settingthyristors S, the transfer thyristors T, the coupling diodes D, thestart diode SD, the power supply line resistors Rg, and thecurrent-limit resistors R1 and R2 is referred to as a transfer unit 101.Each of the setting thyristors S is an example of a setting element, andeach of the transfer thyristors T is an example of a transfer element.

Next, the connections of the elements (such as the laser diodes LD, thesetting thyristors S, and the transfer thyristors T) will be described.

As described above, each of the laser diodes LDij and each of thesetting thyristors Sij are connected in series. That is, the anodes ofthe setting thyristors Sij are connected to a reference potential Vsub(such as ground potential (GND)), and the cathodes of the settingthyristors Sij are connected to the anodes of the laser diodes LDij. Thegates of setting thyristors Sij with the same number i are connected inparallel and are represented as a gate Gsi. The cathodes of the laserdiodes LDij are connected in common to a turn-on signal line 75 thatprovides a turn-on signal ϕI to control each of the laser diodes LD tothe state of emitting light or the state of not emitting light.

As described below, the reference potential Vsub is supplied through aback-surface electrode 92 (see FIGS. 3 and 4, described below) disposedon the back surface of a substrate 80 that forms the light-emittingdevice 10.

The anodes of the transfer thyristors T are connected to the referencepotential Vsub. The cathodes of the odd numbered transfer thyristors T1,T3, etc., are connected to a transfer signal line 72. The transfersignal line 72 is connected to a ϕ1 terminal via the current-limitresistor R1.

The cathodes of the even numbered transfer thyristors T2, T4, etc. areconnected to a transfer signal line 73. The transfer signal line 73 isconnected to a ϕ2 terminal via the current-limit resistor R2.

The coupling diodes D are connected in series. That is, the cathode ofone of the coupling diodes D is connected to the anode of the couplingdiode D adjacent thereto in the x direction. The anode of the startdiode SD is connected to the transfer signal line 73, and the cathode ofthe start diode SD is connected to the anode of the coupling diode D1.

The cathode of the start diode SD and the anode of the coupling diode D1are connected to the gate Gt1 of the transfer thyristor T1. The cathodeof the coupling diode D1 and the anode of the coupling diode D2 areconnected to the gate Gt2 of the transfer thyristor T2. The same appliesto the other coupling diodes D.

The gates Gt of the transfer thyristors T are connected to a powersupply line 71 via the power supply line resistors Rg. The power supplyline 71 is connected to a Vgk terminal.

The gate Gti of the transfer thyristor Ti is connected to the gate Gsiof the setting thyristors Sij.

The configuration of the control unit 20 will be described.

The control unit 20 generates a signal such as the turn-on signal ϕI andsupplies the generated signal to the light-emitting device 10. Thelight-emitting device 10 operates in accordance with the suppliedsignal. The control unit 20 is constituted by an electronic circuit. Forexample, the control unit 20 may be an integrated circuit (IC)configured to drive the light-emitting device 10.

The control unit 20 includes a transfer signal generation unit 21, aturn-on signal generation unit 22, a power supply potential generationunit 23, and a reference potential generation unit 24.

The transfer signal generation unit 21 generates transfer signals ϕ1 andϕ2, and supplies the transfer signal ϕ1 to the ϕ1 terminal of thelight-emitting device 10 and the transfer signal ϕ2 to the ϕ2 terminalof the light-emitting device 10.

The turn-on signal generation unit 22 generates the turn-on signal ϕ1,and supplies the turn-on signal ϕ1 to a ϕI terminal of thelight-emitting device 10 via the current-limit resistor RI. Thecurrent-limit resistor RI may be disposed in the light-emitting device10. If the current-limit resistor RI is not required for the operationof the light-emitting device 10, the current-limit resistor RI may notnecessarily be disposed.

The power supply potential generation unit 23 generates a power supplypotential Vgk, and supplies the power supply potential Vgk to the Vgkterminal of the light-emitting device 10. The reference potentialgeneration unit 24 generates the reference potential Vsub, and suppliesthe reference potential Vsub to a Vsub terminal of the light-emittingdevice 10. The power supply potential Vgk is −3.3 V, by way of example.The reference potential Vsub is ground potential (GND), by way ofexample, as described above.

The transfer signals ϕ1 and ϕ2 generated by the transfer signalgeneration unit 21 and the turn-on signal ϕ1 generated by the turn-onsignal generation unit 22 will be described below.

In the light-emitting device 10 illustrated in FIG. 1, four laser diodesLDij (j=1 to 4) are connected to each of transfer thyristors Ti via therespective setting thyristors Sij.

As described below, each of the transfer thyristors Ti is turned on,thereby setting the setting thyristors Sij connected to the transferthyristor Ti so as to be capable of entering an on-state. The transferthyristors Ti are driven so as to be turned on one after another. Thus,the transfer thyristors Ti are represented as transfer thyristors T. Thesetting thyristors Sij are turned on, thereby allowing the laser diodesLDij to emit light. Thus, the setting thyristors Sij, which set thelaser diodes LD to the state of being capable of emitting light, arerepresented as setting thyristors S.

Here, a plurality of laser diodes LD constitute each of the laser diodeLD groups. Each of the transfer thyristors T is connected to one of thelaser diode LD groups, and the laser diodes LD included in the laserdiode LD group emit light concurrently.

It is desirable that the laser diodes LD oscillate in a low-order singletransverse mode (single mode). In the single mode, light (exit light)exiting from a light-emitting point (a light exit opening 310illustrated in FIGS. 3 and 4, described below) of each of the laserdiodes LD has an intensity profile with a single peak (a characteristichaving a single intensity peak). On the other hand, in the laser diodesLD that oscillate in multiple transverse modes including higher-ordermultiple transverse modes (multimode), the intensity profiles are likelyto be distorted such as exhibiting a plurality of peaks. In the singlemode, furthermore, the divergence angle of light (exit light) exitingfrom a light-emitting point is smaller than that in the multimode.Accordingly, for the same optical output, the optical density at anirradiated surface is larger in the single mode than in the multimode.The divergence angle is defined as the full width at half maximum (FWHM)of light emitted from the laser diodes LD.

The smaller the area of the light-emitting point, the more likely thelaser diode LD is to oscillate in the single transverse mode (singlemode). Thus, the optical output of the laser diode LD in the single modeis small. If the area of the light-emitting point is increased toincrease the optical output, as described above, a transition to themultimode occurs. In the first exemplary embodiment, thus, a pluralityof laser diodes LD constitute a laser diode LD group, and the pluralityof laser diodes LD included in the laser diode LD group are allowed toemit light concurrently to increase the optical output.

Plan View Layout of Light-Emitting Device 10

FIG. 2 illustrates an example of a plan view layout of thelight-emitting device 10 according to the first exemplary embodiment. InFIG. 2, a direction extending rightward is defined as the x direction,and a direction extending upward is defined as the y direction. The xdirection is the same direction as the x direction in FIG. 1.

The light-emitting device 10 is formed of a semiconductor material thatallows a beam of laser light to be emitted. For example, thelight-emitting device 10 is formed of a GaAs-based compoundsemiconductor. As illustrated in sectional views described below (seeFIGS. 3 and 4, described below), the light-emitting device 10 isconstituted by a multi-layer semiconductor body formed by stacking aplurality of GaAs-based compound semiconductor layers on top of eachother on a p-type GaAs substrate 80. Then, the multi-layer semiconductorbody is separated into a plurality of island-shaped portions, therebyforming the light-emitting device 10. The island-shaped areas arereferred to as islands. Etching the multi-layer semiconductor body intoisland-shaped portions to obtain separate elements is referred to asmesa etching. The plan view layout of the light-emitting device 10 willbe described using islands 301, 304, and 305 illustrated in FIG. 2. Todistinguish islands 301 and 302 from each other, the islands 301 and 302are represented as 301-i and 302-i, respectively, in a way similar tothat described above (i≥1).

Each of the islands 301-i is provided with the laser diodes LDij, thesetting thyristors Sij, the transfer thyristor Ti, and the couplingdiode Di (in the illustrated example, j=1 to 4). Each of the laserdiodes LDij and the corresponding one of the setting thyristors Sij arestacked on top of each other. In FIG. 2, the laser diodes LDij and thesetting thyristors Sij are represented as LD/Sij.

The islands 301-i are disposed in parallel in the x direction. Here, thelaser diode LD groups are arranged one-dimensionally in the x direction.

Each of the islands 302-i is provided with the power supply lineresistor Rgi. The islands 302-i are disposed in parallel in the xdirection.

The island 303 is provided with the start diode SD. The island 304 isprovided with the current-limit resistor R1, and the island 305 isprovided with the current-limit resistor R2.

Cross-Sectional Structure of Light-Emitting Device 10

Next, prior to the description of connections among the islands 301,302, 303, 304, and 305, the cross-sectional structure of the islands 301will be described.

FIG. 3 is a cross-sectional view of the light-emitting device 10, takenalong line III-III of FIG. 2. In FIG. 3, a direction extending leftwardis defined as the y direction. The cross-sectional view illustrated inFIG. 3 is a cross-sectional view of the island 301-1. In FIG. 3, thecoupling diode D1, the transfer thyristor T1, the laser diodeLD11/setting thyristor S11 (LD/S11), and the laser diode LD12/settingthyristor S12 (LD/S12) are illustrated from the left to the right. Thelaser diode LD13/setting thyristor S13 (LD/S13) and the laser diodeLD14/setting thyristor S14 (LD/S14) are disposed to the right of thelaser diode LD12/setting thyristor S12 (LD/S12), which are notillustrated in FIG. 3.

First, a portion where a setting thyristor S and a laser diode LD arestacked on top of each other (such as LD/S11 or LD/S12) will bedescribed. As illustrated in FIG. 3, on the p-type GaAs substrate 80,layers forming the setting thyristor S are stacked on top of each other,which include a p-type anode layer (hereinafter referred to as a p-anodelayer; the same applies to the other layers) 81, a voltage reductionlayer 89, an n-type gate layer (n-gate layer) 82, a p-type gate layer(p-gate layer) 83, and an n-type cathode layer (n-cathode layer) 84.That is, the setting thyristor S is formed by stacking the p-anode layer81 as an anode, the n-gate layer 82 as an n-gate, the p-gate layer 83 asa p-gate, and the n-cathode layer 84 as a cathode on top of each other.

Then, a tunnel junction layer 85 is stacked on top of the n-cathodelayer 84.

On top of the tunnel junction layer 85, layers forming the laser diodesLD are stacked on top of each other, which include a p-type anode layer(p-anode layer) 86, a light-emitting layer 87, and an n-type cathodelayer (n-cathode layer) 88. That is, the laser diode LD is formed bystacking the p-anode layer 86 as an anode, the light-emitting layer 87as a light-emitting layer, and the n-cathode layer 88 as a cathode ontop of each other.

The setting thyristor S and the laser diode LD are connected in seriesvia the tunnel junction layer 85. The tunnel junction layer 85 and thevoltage reduction layer 89 will be described below.

The n-gate layer 82 is an example of a first gate layer, and the p-gatelayer 83 is an example of a second gate layer.

The laser diode LD11/setting thyristor S11 (LD/S11) will be described asan example of the laser diode LD/setting thyristor S, with numeralsassigned, whereas the other laser diodes LD/setting thyristors S aresimilar and are not assigned numerals.

In a portion where the laser diode LD and the setting thyristor S arestacked on top of each other, the n-cathode layer 88, the light-emittinglayer 87, the p-anode layer 86, the tunnel junction layer 85, and then-cathode layer 84 are removed by etching so as to expose the p-gatelayer 83 around the laser diode LD. Here, the laser diode LD has acircular cross-section. That is, the portion of the laser diode LD isformed into a cylindrical shape. Thus, the portion of the laser diode LDis represented as a post 311 (see FIG. 2).

In the post 311, an n-ohmic electrode 321, which is formed of a metalmaterial that facilitates the establishment of ohmic contact with ann-type semiconductor layer such as the n-cathode layer 88, is disposedon top of the n-cathode layer 88 of the laser diode LD. The n-ohmicelectrode 321 is formed into a circular shape so as to surround thelight exit opening 310. Further, an interlayer insulating layer 91 isdisposed so as to cover a surface of the n-ohmic electrode 321. On topof the interlayer insulating layer 91, the turn-on signal line 75 isdisposed so as to be connected to the n-ohmic electrode 321 via athrough-hole formed in the interlayer insulating layer 91. When theinterlayer insulating layer 91 is less likely to transmit exit lightfrom the laser diode LD, a light exit layer that is more likely totransmit exit light from the laser diode LD may be disposed over thelight exit opening 310 instead of the interlayer insulating layer 91.

The interlayer insulating layer 91 is disposed so as to cover theentirety of the light-emitting device 10.

The p-anode layer 81, the voltage reduction layer 89, the n-gate layer82, and the p-gate layer 83, which form the setting thyristor S, arecontinuous across the laser diodes LD (the laser diodes LD11 to LD14)included in the laser diode LD group #1.

In the post 311, the p-anode layer 86 includes a current constrictionlayer 86 b. By way of example, the p-anode layer 86 is constituted bythree layers, namely, a lower p-anode layer 86 a, the currentconstriction layer 86 b, and an upper p-anode layer 86 c. The currentconstriction layer 86 b is formed of a material having a high Alcomposition ratio, such as AlAs, and is a layer in which Al is oxidizedto Al₂O₃, which increases electrical resistance, resulting in theformation of a portion where current is less likely to flow (asolid-black portion in FIG. 3).

Since the post 311 is formed into a cylindrical shape, if the currentconstriction layer 86 b is oxidized from the exposed side surfaces ofthe p-anode layer 86, oxidation progresses from a circumferentialportion of the circular cross section toward a center portion. Thecenter portion is not oxidized, resulting in the center portion of thecross section of the laser diode LD being a current-passing area α,where current is likely to flow, and the circumferential portion being acurrent-blocking area β, where current is less likely to flow. In thelaser diode LD, light emission is generated in a portion having aconstricted current path in the current-passing area α of thelight-emitting layer 87. An area on the surface of the laser diode LDcorresponding to the current-passing area α is represented sometimes asa light-emitting point or the light exit opening 310.

The current constriction layer 86 b is provided to allow the laser diodeLD to oscillate in a low-order single transverse mode (single mode).That is, the post 311 where the laser diode LD is formed is formed tohave a circular cross section, which is oxidized from thecircumferential portion, thereby achieving a circular cross section ofthe light exit opening 310 and reducing the area of the light exitopening 310.

In addition, a defect caused by mesa etching is likely to occur in thecircumferential portion of the laser diode LD, and non-radiativerecombination is likely to occur. The current-blocking area β reducesthe electric power to be consumed by non-radiative recombination. Thus,low power consumption and enhanced light extraction efficiency areachieved. The light extraction efficiency is the amount of light thatcan be extracted per amount of power.

Like the setting thyristor S, the transfer thyristor T1 is constitutedby the p-anode layer 81, the voltage reduction layer 89, the n-gatelayer 82, the p-gate layer 83, and the n-cathode layer 84. That is, thetransfer thyristor Ti is formed by stacking the p-anode layer 81 as ananode, the n-gate layer 82 as an n-gate, the p-gate layer 83 as ap-gate, and the n-cathode layer 84 as a cathode on top of each other.Here, the p-gate layer 83 is provided with a gate electrode (a p-ohmicelectrode 331 described below), which functions as a gate forcontrolling the operation of the transfer thyristor T1.

On the other hand, the coupling diode D1 is constituted by the p-gatelayer 83 and the n-cathode layer 84. That is, the coupling diode D1includes the p-gate layer 83 as an anode, and the n-cathode layer 84 asa cathode.

In a portion corresponding to the transfer thyristor T1 and the couplingdiode D1, the n-cathode layer 88, the light-emitting layer 87, thep-anode layer 86, and the tunnel junction layer 85, which form theportion where the setting thyristor S and the laser diode LD are stackedon top of each other, are removed. Further, the n-cathode layer 84 isremoved, except for the portion corresponding to the transfer thyristorT1 and the coupling diode D1.

In the portion of the transfer thyristor T1, the n-cathode layer 84 isleft as a post 312. In the post 312, an n-ohmic electrode 322 isdisposed as a cathode electrode on top of the n-cathode layer 84. Then-ohmic electrode 322 is connected to the transfer signal line 72.

Likewise, in the portion of the coupling diode D1, the n-cathode layer84 is left as a post 313. In the post 313, an n-ohmic electrode 323 isdisposed as a cathode electrode on top of the n-cathode layer 84. Then-ohmic electrode 323 is connected to a line 77.

On a surface where the n-cathode layer 84 is removed and the p-gatelayer 83 is exposed, a p-ohmic electrode 331 (see FIG. 2) is disposed,which is formed of a metal material that facilitates the establishmentof ohmic contact with a p-type semiconductor layer such as the p-gatelayer 83. The p-ohmic electrode 331 is disposed as a gate electrode ofthe transfer thyristor T1 and as an anode electrode of the couplingdiode D1.

Further, the island 301-1, around which the multi-layer semiconductorbody is removed by etching up to the substrate 80, is separated from theother islands (such as the islands 301-2, 301-3, 301-4, 302-2, 302-3,302-4, and 303). The multi-layer semiconductor body may be etched up tothe p-anode layer 81 or etched up to a portion of the p-anode layer 81in the thickness direction.

As described above, in the light-emitting device 10, a plurality oflaser diodes LD are defined as a laser diode LD group, and the pluralityof laser diodes LD included in the laser diode LD group are allowed toemit light concurrently. In this case, if a line is disposed for each ofthe laser diodes LD included in the laser diode LD group to provide asignal from the transfer unit 101 to control emission/non-emission oflight from the laser diode LD, the laser diodes LD need to be spacedapart from each other a certain distance, resulting in an increase inthe area of the light-emitting device 10.

To address this, the light-emitting device 10 according to the firstexemplary embodiment is provided with, for each of the laser diodes LD,the setting thyristor S that sets the laser diode LD to the state ofbeing capable of emitting light, and the setting thyristor S and thelaser diode LD are stacked on top of each other to prevent an increasein the area of the light-emitting device 10. In addition, thesemiconductor layers that form the setting thyristor S are madecontinuous for each of the laser diode LD groups, which eliminates aneed to dispose a line to provide a signal from the transfer unit 101 tocontrol emission/non-emission of light from the laser diode LD. In FIG.3, the semiconductor layers that are made continuous are the p-anodelayer 81, the voltage reduction layer 89, the n-gate layer 82, and thep-gate layer 83. While both the n-gate layer 82 and the p-gate layer 83are continuous, only one of the n-gate layer 82 and the p-gate layer 83may be continuous. In the illustrated anode-grounded configuration, itis sufficient that the n-gate layer 82 disposed closer to the substrate80 be continuous. In a cathode-grounded configuration, conversely, it issufficient that the p-gate layer 83 be made continuous.

The coupling diode D is constituted by the n-cathode layer 84 and thep-gate layer 83, with the n-ohmic electrode 323 on top of the n-cathodelayer 84 serving as a cathode electrode and the p-ohmic electrode 331serving as an anode electrode (see FIG. 1), the p-ohmic electrode 331being disposed on top of the p-gate layer 83 and formed of a metalmaterial that facilitates the establishment of ohmic contact with ap-type semiconductor layer such as the p-gate layer 83. The cathodeelectrode is sometimes represented as a cathode, and the anode electrodeis sometimes represented as an anode. In addition, the p-anode layers(the p-anode layers 81 and 86) sometimes function as an anode and then-cathode layers (the n-cathode layers 84 and 88) as a cathode with noelectrode (no anode electrode or cathode electrode) interposedtherebetween.

FIG. 4 is a cross-sectional view of the light-emitting device 10, takenalong line IV-IV of FIG. 2. In FIG. 4, a direction extending rightwardis defined as the x direction. In FIG. 4, the islands 301-1, 301-2,301-3, and 301-4 are disposed from the left to the right. In the island301-1, the laser diode LD11/setting thyristor S11 (LD/S11) included inthe laser diode LD group #1 are illustrated. In the island 301-2, thelaser diode LD21/setting thyristor S21 (LD/S21) included in the laserdiode LD group #2 are illustrated. In the island 301-3, the laser diodeLD31/setting thyristor S31 (LD/S31) included in the laser diode LD group#3 are illustrated. In the island 301-4, the laser diode LD41/settingthyristor S41 (LD/S41) included in the laser diode LD group #4 areillustrated. Also, the laser diode LD11/setting thyristor S11 (LD/S11)in the laser diode LD group #1 will be described as an example of thelaser diode LD/setting thyristor S, with numerals assigned, and theother laser diodes LD/setting thyristors S are similar and are notassigned numerals.

As illustrated in FIG. 4, in the cross section taken along line IV-IV ofFIG. 2, around the islands 301-i, the n-cathode layer 88, thelight-emitting layer 87, the p-anode layer 86, the tunnel junction layer85, the n-cathode layer 84, the p-gate layer 83, the n-gate layer 82,the voltage reduction layer 89, and the p-anode layer 81 are removed upto the substrate 80. The post 311 is formed into a cylindrical shape.The post 311 has a width smaller than the portion including the p-anodelayer 81, the voltage reduction layer 89, the n-gate layer 82, and thep-gate layer 83 (see FIG. 2).

On top of the n-cathode layer 88, the n-ohmic electrode 321 is disposed.The n-ohmic electrode 321 is connected to the turn-on signal line 75 viathe through-hole formed in the interlayer insulating layer 91. Asillustrated in FIG. 2, the turn-on signal line 75 is connected to the ϕIterminal.

As illustrated in FIG. 4, in each of the laser diode LD groups, theislands 301-i are separated from each other by mesa etching and areelectrically disconnected. In contrast, as depicted in the island 301-1illustrated in FIG. 3, within each of the laser diode LD groups, thep-anode layer 81, the voltage reduction layer 89, the n-gate layer 82,and the p-gate layer 83, which form the transfer thyristor T and thesetting thyristor S, are formed to be continuous and are electricallyconnected.

Referring back to FIG. 2, the other islands 302-i, 303, 304, and 305will be described. The islands 302-i have the same structure, and thusthe island 302-1 will be described as the island 302. The island 302-1is provided with the power supply line resistor Rg1. In the island302-1, the n-cathode layer 88, the light-emitting layer 87, the p-anodelayer 86, the tunnel junction layer 85, and the n-cathode layer 84 inthe multi-layer semiconductor body are removed such that the p-gatelayer 83 is exposed. On top of the exposed p-gate layer 83, p-ohmicelectrodes 332 and 333 are disposed. The p-gate layer 83 between thep-ohmic electrodes 332 and 333 is used as a resistor.

The island 303 is provided with the start diode SD. In the island 303,the n-cathode layer 88, the light-emitting layer 87, the p-anode layer86, and the tunnel junction layer 85 in the multi-layer semiconductorbody are removed. Further, the p-gate layer 83 is exposed, except for apost 314 in which the n-cathode layer 84 is left. The n-cathode layer 84of the post 314 is the cathode of the start diode SD, and the p-gatelayer 83 is the anode of the start diode SD. An n-ohmic electrode 324,which is disposed on top of the n-cathode layer 84 of the post 314,serves as a cathode electrode, and a p-ohmic electrode 334, which isdisposed on top of the exposed p-gate layer 83, serves as an anodeelectrode.

The island 304 is provided with the current-limit resistor R1, and theisland 305 is provided with the current-limit resistor R2. The islands304 and 305 have a configuration similar to that of the island 302, andare each configured such that two p-ohmic electrodes (assigned nonumerals) are disposed on top of the exposed p-gate layer 83, with theportion of the p-gate layer 83 between the two p-ohmic electrodes in theisland 304 serving as the current-limit resistor R1 and the portion ofthe p-gate layer 83 between the two p-ohmic electrodes in the island 305serving as the current-limit resistor R2.

The islands 301 to 305 and connections between the islands 301 to 305will be described.

As described above, the n-cathode layer 88, which forms the cathodes ofthe laser diodes LD disposed in the posts 311 of the islands 301, isconnected to the turn-on signal line 75 in parallel via the n-ohmicelectrodes 321.

The n-cathode layer 88, which is the cathode of the transfer thyristorT1 disposed in the post 312 of the island 301-1, is connected to thetransfer signal line 72 via the n-ohmic electrode 322. The same appliesto the transfer thyristor T3 disposed in the island 301-3. That is, thecathodes (the n-cathode layer 88) of the transfer thyristors Ti with theodd numbers i are connected to the transfer signal line 72.

On the other hand, the cathode (the n-cathode layer 88) of the transferthyristor T2 disposed in the island 301-2 is connected to the transfersignal line 73. That is, the cathodes (the n-cathode layer 88) of thetransfer thyristors Ti with the even numbers i are connected to thetransfer signal line 73.

The p-ohmic electrode 331, which is the gate Gt1 of the island 301-1, isconnected to a line 76. The line 76 is connected to the p-ohmicelectrode 332 of the power supply line resistor Rg1 disposed in theisland 302-1 and the n-ohmic electrode 324, which is the cathodeelectrode of the start diode SD disposed in the island 303.

The cathode (the n-cathode layer 88) of the coupling diode D1 disposedin the post 313 of the island 301-1 is connected to the line 77 via then-ohmic electrode 323. The line 77 is connected to the gate electrode(assigned no numeral) of the gate Gt2 of the adjacent island 301-2 and ap-ohmic electrode (assigned no numeral) of the power supply lineresistor Rg2 of the island 302-2.

The p-ohmic electrode 333 of the power supply line resistor Rg1 of theisland 302-1 is connected to the power supply line 71. The same appliesto the power supply line resistor Rg2 and the like in the other island302-2 and the like. The power supply line 71 is connected to the Vgkterminal.

The transfer signal line 72 is connected to one of the p-ohmicelectrodes (assigned no numeral) of the current-limit resistor R1 of theisland 304. The other p-ohmic electrode (assigned no numeral) of thecurrent-limit resistor R1 is connected to the ϕ1 terminal. The transfersignal line 73 is connected to the p-ohmic electrode 334 of the startdiode SD of the island 303, and is also connected to one of the p-ohmicelectrodes (assigned no numeral) of the current-limit resistor R2 of theisland 305. The other p-ohmic electrode (assigned no numeral) of thecurrent-limit resistor R2 of the island 305 is connected to the ϕ2terminal.

Thyristor

Next, the operation of the setting thyristor S and the transferthyristor T and the voltage reduction layer 89 will be described. Sincethe operations of the setting thyristor S and the transfer thyristor Tare the same, the transfer thyristor T1 in the island 301-1 will bedescribed as a thyristor Th.

FIGS. 5A to 5C illustrate the operation of the thyristor Th. FIG. 5A isa cross-sectional view of a thyristor Th1 that does not include thevoltage reduction layer 89, FIG. 5B is a cross-sectional view of athyristor Th2 that includes the voltage reduction layer 89, and FIG. 5Cillustrates the characteristics of the thyristors Th1 and Th2.

The thyristor Th1 illustrated in FIG. 5A, which includes no voltagereduction layer, is formed by stacking the p-anode layer 81, the n-gatelayer 82, the p-gate layer 83, and the n-cathode layer 84 on top of eachother. A portion of the n-cathode layer 84, except for the post 312, isremoved, and the p-gate layer 83 is exposed. On top of the p-gate layer83, the p-ohmic electrode 331 is formed (see FIG. 2).

The thyristor Th2 illustrated in FIG. 5B, which includes the voltagereduction layer 89, includes the voltage reduction layer 89 between thep-anode layer 81 and the n-gate layer 82.

As illustrated in FIGS. 3 and 4, the p-anode layer 81 of the thyristorsTh1 and Th2 is connected to the substrate 80 (not illustrated in FIGS.5A and 5B) and is set to the reference potential Vsub.

As described above, the thyristor Th is a three-terminal semiconductorelement having an anode, a cathode, and a gate. The thyristor Th isformed by stacking p-type semiconductor layers (the p-anode layer 81 andthe p-gate layer 83) and n-type semiconductor layers (the n-gate layer82 and the n-cathode layer 84), which are formed of a material such asGaAs, GaAlAs, or AlAs, on top of each other. That is, the thyristor Thhas a pnpn structure. As an example, a forward potential (diffusionpotential) Vd of a pn junction formed by a p-type semiconductor layerand an n-type semiconductor layer is set to 1.5 V.

First, the operation of the thyristor Th1 illustrated in FIG. 5A, whichdoes not include the voltage reduction layer 89, will be described. Asan example, the reference potential Vsub of the p-anode layer 81 is setto 0 V as a high-level potential (hereinafter referred to as “H”), andthe power supply potential Vgk supplied to the Vgk terminal (see FIG. 2)is set to −3.3 V as a low-level potential (hereinafter referred to as“L”), which are sometimes represented as “H (0 V)” and “L (−3.3 V)”,respectively. As illustrated in FIG. 1, the Vgk terminal is connected tothe gate (or the gate Gt1 when the thyristor Th is the transferthyristor T1) via the power supply line resistor Rg1.

The thyristor Th1, which does not include the voltage reduction layer89, has a characteristic represented by “without voltage reductionlayer” in FIG. 5C.

When a potential lower than (a negative potential having a largerabsolute value than) a threshold voltage is applied to the cathode ofthe thyristor Th1 in an off-state where no current flows between theanode and the cathode thereof, the thyristor Th1 enters an on-state(turned on). The threshold voltage for the thyristor Th1 is equal to avalue obtained by subtracting the forward potential Vd (1.5 V) of the pnjunction from the potential at the gate.

When the thyristor Th1 enters the on-state, the gate of the thyristorTh1 has a potential close to the potential at the anode. Since the anodehas a potential of 0 V, the potential at the gate becomes equal to 0 V.The cathode of the thyristor Th1 in the on-state has a potential (theabsolute value being denoted by a holding voltage) close to a potentialobtained by subtracting the forward potential Vd (1.5 V) of the pnjunction from the potential at the anode. Since the anode has apotential of 0 V, the cathode of the thyristor Th1 in the on-statebecomes equal to a potential close to −1.5 V (a negative potentialhaving a larger absolute value than 1.5 V) (Vh1 in FIG. 5C). The holdingvoltage is set to 1.5 V.

To the cathode of the thyristor Th1 in the on-state, a potential lowerthan (a negative potential having a larger absolute value than) apotential necessary to keep the thyristor Th1 in the on-state iscontinuously applied. When current capable of keeping the on-state(maintaining current) is supplied, the thyristor Th1 is kept in theon-state.

In contrast, when the cathode of the thyristor Th1 in the on-state has apotential higher (a negative potential having a smaller absolute value,0 V, or a positive potential) than the potential necessary to keep thethyristor Th1 in the on-state (the potential close to −1.5 V, describedabove), the thyristor Th1 enters an off-state (turned off).

Next, the operation of the thyristor Th2 illustrated in FIG. 5B, whichincludes the voltage reduction layer 89, will be described.

A rising voltage Vr (see FIG. 5C) of the thyristor Th is determined bythe energy of the smallest band gap (band gap energy) in the multi-layersemiconductor body of the thyristor Th. The rising voltage Vr of thethyristor Th is a voltage obtained by, as illustrated in FIG. 5C,extrapolating the current in the thyristor Th in the on-state to thevoltage axis.

The voltage reduction layer 89 is a layer having a smaller band gapenergy than the p-anode layer 81, the n-gate layer 82, the p-gate layer83, and the n-cathode layer 84. Accordingly, a rising voltage Vr2 of thethyristor Th2 is lower than the rising voltage Vr1 of the thyristor Th1illustrated in FIG. 5A, which does not include the voltage reductionlayer 89. As an example, the voltage reduction layer 89 is a layer witha smaller band gap than the band gap of the light-emitting layer 87.

The setting thyristor S and the transfer thyristor T are not used aslight-emitting elements, but are provided to drive a light-emittingelement such as the laser diode LD. Thus, the band gap of the settingthyristor S and the transfer thyristor T is determined irrespective ofthe wavelength of light emitted from a light-emitting element such asthe laser diode LD. With the use of the voltage reduction layer 89 witha smaller band gap than the band gap of the light-emitting layer 87, therising voltage of a thyristor is reduced from Vr1 to Vr2 (Vr1>Vr2).While the rising voltage Vr of a thyristor has been described, the sameapplies to the holding voltage Vh, which is a voltage for keeping thethyristor in the on-state (see FIG. 5C). That is, the holding voltagebecomes equal to 1.5 V (Vh1) when the voltage reduction layer 89 is notincluded, and becomes equal to 0.8 V (Vh2) when the voltage reductionlayer 89 is included.

A switching voltage Vs (see FIG. 5C) of the thyristor Th is determinedby a depletion layer of a reverse-biased semiconductor layer. Thus, theswitching voltage Vs of the thyristor Th is less affected by the voltagereduction layer 89.

FIG. 6 illustrates band gap energies of materials of semiconductorlayers.

GaAs has a lattice constant of approximately 5.65 Å. AlAs has a latticeconstant of approximately 5.66 Å. A material having a lattice constantclose to these lattice constants can be epitaxially grown on a GaAssubstrate. For example, AlGaAs or Ge, which is a compound of GaAs andAlAs, can be epitaxially grown on a GaAs substrate.

InP has a lattice constant of approximately 5.87 Å. A material having alattice constant close to this lattice constant can be epitaxially grownon an InP substrate.

GaN has a different lattice constant depending on the growth plane, andwith the lattice constant being 3.19 Å for the a-plane and 5.17 Å forthe c-plane. A material having a lattice constant close to these latticeconstants can be epitaxially grown on a GaN substrate.

Materials with band gap energies that provide reduced rising voltage ofthe thyristor Th for GaAs, InP, and GaN are included in a shaded rangeillustrated in FIG. 6. That is, when a material included in the shadedrange is used for a layer of the thyristor Th, the rising voltage Vr ofthe thyristor Th becomes equal to the band gap energy of the materialincluded in the shaded range.

For example, GaAs has a band gap energy of approximately 1.43 eV.Without the voltage reduction layer 89, the rising voltage Vr1 of athyristor is approximately 1.43 V. However, when a material included inthe shaded range is used for or included in a layer of the thyristor,the rising voltage Vr2 of the thyristor may be set to be higher than 0 Vand less than 1.43 V (0 V<Vr2<1.43 V).

Consequently, power consumption is reduced when a thyristor is in theon-state.

Examples of the material included in the shaded range include Ge with aband gap energy of approximately 0.67 eV for GaAs. Other examples of thematerial include InAs with a band gap energy of approximately 0.36 eVfor InP. Materials having a small band gap energy, such as a compound ofGaAs and InP, a compound of InN and InSb, or a compound of InN and InAs,may be used for a GaAs substrate or an InP substrate. In particular, aGaInNAs-based compound mixture is suitable. These may contain Al, Ga,As, P, Sb, or the like. In addition, GaNP may serve as the voltagereduction layer 89 for GaN. Any other material such as (1) an InN layer,an InGaN layer, or a GaNAs layer obtained by metamorphic growth or thelike, (2) quantum dots of InN, InGaN, InNAs, InNSb, or GaNAs, or (3) anInAsSb layer having a lattice constant that is twice the latticeconstant of GaN (the a-plane), may be used as the voltage reductionlayer 89. These may contain Al, Ga, N, As, P, Sb, or the like.

That is, the voltage reduction layer 89 reduces the rising voltage Vrwhile maintaining the switching voltage Vs of the thyristor Th.Accordingly, the holding voltage applied to the thyristor Th in theon-state is reduced, and power consumption is reduced. The switchingvoltage Vs of the thyristor Th is set to any value by adjusting thematerials, impurity concentrations, and the like of the p-anode layer81, the n-gate layer 82, the p-gate layer 83, and the n-cathode layer84. The voltage reduction layer 89 is optional. Note that the switchingvoltage Vs changes depending on the position at which the voltagereduction layer 89 is inserted.

While FIG. 5B illustrates an example in which a single voltage reductionlayer 89 is provided, a plurality of voltage reduction layers 89 may beprovided. For example, the voltage reduction layer 89 may be disposedbetween the p-anode layer 81 and the n-gate layer 82, between the n-gatelayer 82 and the p-gate layer 83, and between the p-gate layer 83 andthe n-cathode layer 84. Alternatively, the voltage reduction layer 89may be disposed in the n-gate layer 82 and in the p-gate layer 83. Inaddition, two or three layers may be selected from among the p-anodelayer 81, the n-gate layer 82, the p-gate layer 83, and the n-cathodelayer 84, and the voltage reduction layer 89 may be disposed in each ofthe selected two or three layers. The conductivity types of thesevoltage reduction layers 89 may be set to match the conductivity typesof the anode layer, the cathode layer, and the gate layers where thevoltage reduction layers 89 are disposed, or may be i-type.

Tunnel Junction Layer 85

Next, as illustrated in FIGS. 3 and 4, the setting thyristor S and thelaser diode LD in each of the islands 301 are stacked on top of eachother with the tunnel junction layer 85 interposed therebetween.Accordingly, the setting thyristor S and the laser diode LD areconnected in series.

FIGS. 7A to 7C further illustrate the multi-layer structure of thesetting thyristor S and the laser diode LD. FIG. 7A is a schematicenergy band diagram of the multi-layer structure of the settingthyristor S and the laser diode LD, FIG. 7B is an energy band diagram ofthe tunnel junction layer 85 in reverse bias, and FIG. 7C illustrates acurrent-voltage characteristic of the tunnel junction layer 85. In FIGS.7A to 7C, the voltage reduction layer 89 is not illustrated.

Voltage is applied between the n-ohmic electrode 321 to which theturn-on signal ϕI is applied and the back-surface electrode 92 with thereference potential Vsub illustrated in FIGS. 3 and 4 so that thesetting thyristor S and the laser diode LD are forward-biased. Then, asillustrated in the energy band diagram in FIG. 7A, the interface of ann⁺⁺ layer 85 a and p ⁺⁺ layer 85 b of the tunnel junction layer 85 isreverse-biased.

The tunnel junction layer 85 is a junction of the n++ layer 85 a dopedwith an n-type impurity at a high concentration and the p++ layer 85 bdoped with a p-type impurity at a high concentration. This results in adepletion region with a small width. Forward bias allows electrons totunnel from the conduction band on the n++ layer 85 a side to thevalence band on the p++ layer 85 b side. In this case, the tunneljunction layer 85 exhibits a negative resistance characteristic (see theforward bias side (+V) in FIG. 7C).

On the other hand, as illustrated in FIG. 7B, when the tunnel junctionlayer 85 is reverse-biased (−V), a potential Ev of the valence band onthe p++ layer 85 b side becomes higher than a potential Ec of theconduction band on the n++ layer 85 a side. Then, electrons tunnel fromthe valence band on the p++ layer 85 b side to the conduction band onthe n++ layer 85 a side. As the reverse bias voltage (−V) increases,electrons are more likely to tunnel. That is, as illustrated in thereverse bias side (−V) in FIG. 7C, current is more likely to flowthrough the tunnel junction layer 85 (tunnel junction) as the reversebias becomes greater.

Thus, as illustrated in FIG. 7A, when voltage is applied so that thesetting thyristor S and the laser diode LD are forward-biased and thesetting thyristor S is turned on and enters the on-state, current flowsfrom the setting thyristor S to the laser diode LD even if the tunneljunction layer 85 is in reverse bias.

In place of the tunnel junction layer 85, a group III-V compound layerhaving metallic conductivity and epitaxially grown on a group III-Vcompound semiconductor layer may be used. Examples of the group III-Vcompound layer having metallic conductivity include InNAs, which hasnegative band gap energy when, for example, the InN composition ratio xis in the range of approximately 0.1 to approximately 0.8. InNSb hasnegative band gap energy when, for example, the InN composition ratio xis in the range of approximately 0.2 to approximately 0.75. The termnegative band gap energy is used to indicate that no band gap exists.Thus, conductive characteristics (conduction characteristics) similar tothose of metals are exhibited. That is, the term metallic conductivecharacteristics (conductivity) is used to indicate that current flows ifthe electric potential has a gradient, as in metals.

The lattice constants of the group III-V compounds (semiconductors) suchas GaAs and InP are in the range of 5.6 Å to 5.9 Å. These latticeconstants are close to that of Si, which is approximately 5.43 Å, andthat of Ge, which is approximately 5.66 Å.

In contrast, the lattice constant of InN, which is also a group III-Vcompound, is approximately 5.0 Å for a zinc blende structure, and thelattice constant of InAs is approximately 6.06 Å. Thus, the latticeconstant of InNAs, which is a compound of InN and InAs, may take a valueclose to 5.6 Å to 5.9 Å, as with GaAs or the like.

The lattice constant of InSb, which is a group III-V compound, isapproximately 6.48 Å. Since InN has a lattice constant of approximately5.0 Å, the lattice constant of InNSb, which is a compound of InSb andInN, may take a value close to 5.6 Å to 5.9 Å, as with GaAs or the like.

That is, InNAs and InNSb can be monolithically epitaxially grown on alayer of a group III-V compound (semiconductor), such as GaAs.Furthermore, a layer of a group III-V compound (semiconductor), such asGaAs, can be monolithically stacked on top of a layer of InNAs or InNSbby epitaxial growth.

Accordingly, stacking the setting thyristor S and the laser diode LDwith a group III-V compound layer having metallic conductivityinterposed therebetween in place of the tunnel junction layer 85 suchthat the setting thyristor S and the laser diode LD are connected inseries may prevent the n-cathode layer 84 of the setting thyristor S andthe p-anode layer 86 of the laser diode LD from being reverse-biased.

Operation of Stacked Setting Thyristor S and Laser Diode LD

Next, the operation of the setting thyristor S and the laser diode LD,which are stacked on top of each other, will be described.

The rising voltage of the laser diode LD is set to 1.5 V. That is, if avoltage of 1.5 V or higher is applied between the anode and the cathodeof the laser diode LD, the laser diode LD emits light.

The turn-on signal ϕI is set to 0 V (“H (0 V)”) or −3.3 V (“L (−3.3V)”). A potential of 0 V allows the laser diode LD to enter theoff-state, and a potential of −3.3 V allows the laser diode LD to enterthe on-state from the off-state.

When the laser diode LD is changed from the off-state to the on-state,the turn-on signal ϕI is set to “L (−3.3 V)”. At this time, if −1.5 V isapplied to the gate Gs of the setting thyristor S, the threshold voltagefor the setting thyristor S becomes equal to −3 V, which is obtained bysubtracting the forward potential Vd (1.5 V) of the pn junction from thepotential (−1.5 V) at the gate Gs. In this case, since the turn-onsignal ϕI is set to −3.3 V, the setting thyristor S is turned on and ischanged from the off-state to the on-state. In addition, the laser diodeLD is also changed from the off-state to the on-state. That is, thelaser diode LD performs laser oscillation and emits light. Then, sincethe voltage (holding voltage Vr) applied to the setting thyristor S inthe on-state is 0.8 V, 2.5 V is applied to the laser diode LD. Since therising voltage of the laser diode LD is 1.5 V, the laser diode LDcontinuously emits light.

On the other hand, when the turn-on signal ϕI is set to 0 V, the voltageacross a series connection of the setting thyristor S and the laserdiode LD is 0 V, resulting in the setting thyristor S being changed fromthe on-state to the off-state (turned off). In addition, the laser diodeLD does not emit light.

The operation of the light-emitting device 10 will be described indetail.

Configuration of Multi-Layer Semiconductor Body

As described above, a multi-layer semiconductor body is formed bystacking the substrate 80, the p-anode layer 81, the voltage reductionlayer 89, the n-gate layer 82, the A-gate layer 83, the n-cathode layer84, the tunnel junction layer 85, the p-anode layer 86, thelight-emitting layer 87, and the n-cathode layer 88 on top of eachother.

As described above, the substrate 80 is described as a p-type GaAssubstrate, by way of example. However, the substrate 80 may be formed ofn-type GaAs or intrinsic (i-type) GaAs not doped with impurities.Alternatively, a semiconductor substrate formed of InP, GaN, InAs, orother group III-V or II-VI material, or a substrate formed of sapphire,Si, Ge, or the like may be used. When the material of the substrate 80is changed, a material monolithically stacked on the substrate may be amaterial having a lattice constant that substantially matches that ofthe substrate (including a strain structure, a strain relaxation layer,and metamorphic growth). As an example, InAs, InAsSb, GaInAsSb, or thelike is used on an InAs substrate; InP, InGaAsP, or the like is used onan InP substrate; GaN, AlGaN, or InGaN is used on a GaN substrate or asapphire substrate; and Si, SiGe, GaP, or the like is used on aSisubstrate. If the substrate 80 is electrically insulating, a lineneeds to be provided to supply the reference potential Vsub. When amulti-layer semiconductor body, except for the substrate 80, is attachedto another supporting substrate and the multi-layer semiconductor bodyis disposed on the other supporting substrate, the multi-layersemiconductor body need not have a lattice constant that matches that ofthe supporting substrate.

The p-anode layer 81 is formed of, for example, p-type Al_(0.9)GaAs withan impurity concentration of 1×10¹⁸/cm³. The Al composition may bechanged in the range of 0 to 1.

The n-gate layer 82 is formed of, for example, n-type Al_(0.9)GaAs withan impurity concentration of 1×10¹⁷/cm³. The Al composition may bechanged in the range of 0 to 1.

The p-gate layer 83 is formed of, for example, p-type Al_(0.9)GaAs withan impurity concentration of 1×10¹⁷/cm³. The Al composition may bechanged in the range of 0 to 1.

The n-cathode layer 84 is formed of, for example, n-type Al_(0.9)GaAswith an impurity concentration of 1×10¹⁸/cm³. The Al composition may bechanged in the range of 0 to 1.

The tunnel junction layer 85 is configured as a junction of the n++layer 85 a doped with an n-type impurity at a high concentration and thep++ layer 85 b doped with an n-type impurity at a high concentration(see FIG. 7A). The n++ layer 85 a and the p++ layer 85 b have animpurity concentration as high as 1×10²⁰/cm³, for example. A commonimpurity concentration in the junction is in the order of 10¹⁷/cm³ to10¹⁸/cm³. Examples of the combination of the n++ layer 85 a and the p++layer 85 b (hereinafter referred to as the n++ layer 85 a/p++ layer 85b) include n⁺⁺ GaInP/p^(+÷) GaAs, n⁺⁺ GaInP/p⁺⁺ AlGaAs, n⁺⁺ GaAs/p⁺⁺GaAs, n⁺⁺ AlGaAs/p⁺⁺ AlGaAs, n⁺⁺ InGaAs/p⁺⁺ InGaAs, n⁺⁺ GaInAsP/p⁺⁺GaInAsP, and n⁺⁺ GaAsSb/p⁺⁺ GaAsSb. The elements of the combinations maybe interchanged.

The p-anode layer 86 is formed by stacking the lower p-anode layer 86 a,the current constriction layer 86 b, and the upper p-anode layer 86 c ontop of each other in sequence. The lower p-anode layer 86 a and theupper p-anode layer 86 c are formed of, for example, p-type Al_(0.9)GaAswith an impurity concentration of 5×10¹⁷/cm³. The Al composition may bechanged in the range of 0 to 1.

The current constriction layer 86 b is formed of, for example, AlAs orp-type AlGaAs with a high impurity concentration of Al. Any material maybe used so long as Al is oxidized to form Al₂O₃, which increaseselectrical resistance, resulting in the formation of a current-blockingarea β. The current-blocking area β may be formed by implanting hydrogenion (H⁺) (H⁺ ion implantation) in a semiconductor layer of GaAs, AlGaAs,or the like.

The light-emitting layer 87 has a quantum well structure in which welllayers and barrier layers are alternately stacked. The well layers areformed of, for example, GaAs, AlGaAs, InGaAs, GaAsP, AlGaInP, GaInAsP,GaInP, or the like, and the barrier layers are formed of, AlGaAs, GaAs,GaInP, GaInAsP, or the like. The light-emitting layer 87 may have aquantum line (quantum wire) structure or a quantum box (quantum dot)structure.

The n-cathode layer 88 is formed of, for example, n-type Al_(0.9)GaAswith an impurity concentration of 5×10¹⁷/cm³. The Al composition may bechanged in the range of 0 to 1.

These semiconductor layers are stacked using metal organic chemicalvapor deposition (MOCVD) or molecular beam epitaxy (MBE), for example.As a result, a multi-layer semiconductor body is formed.

Instead of the AlGaAs-based materials described above, GaInP or the likemay be used. Alternatively, a GaN substrate or an InP-based substratemay be used. In addition, the laser diode LD, which is constituted bythe p-anode layer 86, the light-emitting layer 87, and the n-cathodelayer 88, may be formed of a material having a different latticeconstant from that of the material of the setting thyristor S and thetransfer thyristor T, which are constituted by the p-anode layer 81, then-gate layer 82, the p-gate layer 83, and the n-cathode layer 84.Metamorphic growth may be used, or the setting thyristor S and thetransfer thyristor T may be grown separately from the laser diode LD andmay be attached to the laser diode LD. In this case, the latticeconstant of the tunnel junction layer 85 may be made to substantiallymatch that of either material.

The light-emitting device 10 may be produced using a well-knowntechnique such as photolithography or etching, and the method forproducing the light-emitting device 10 will not be described herein.

Operation of Light-Emitting Device 10

FIG. 8 illustrates an example time chart for controllingemission/non-emission of light from the laser diodes LD of thelight-emitting device 10. In the illustrated example, as described abovewith reference to FIGS. 1 and 2, each laser diode LD group includes fourlaser diodes LD, by way of example. In FIG. 8, time elapses inalphabetical order (a, b, c, etc.). In the timing chart illustrated inFIG. 8, the laser diode LD groups #1 to #4 are controlled. Periodsduring which the laser diode LD groups #1 to #4 are caused to emit lightin sequence are represented by periods U-1 to U-4, respectively. Asdescribed below, the periods U-1 to U-4 have different lengths. However,the periods U-1 to U-4 may have the same length.

The time chart illustrated in FIG. 8 will be described with reference toFIG. 1.

At time a, power is supplied to the control unit 20 illustrated inFIG. 1. Then, the reference potential Vsub is set to “H (0 V)”, and thepower supply potential Vgk is set to “L (−3.3 V)”.

Next, the waveforms of the signals (the transfer signals ϕ1 and ϕ2 andthe turn-on signal ϕ1) will be described. The periods U-1, U-2, U-3, andU-4 are basically the same, and thus the period U-1 will be describedmainly. The periods U-1 to U-4 are referred to as period U unlessdistinguished otherwise.

The transfer signal ϕ1 is a signal set to “H (0 V)” or “L (−3.3 V)”. Thetransfer signal ϕ1 is “H (0 V)” at time a, and is changed to “L (−3.3V)” at time b. Then, at time the transfer signal ϕ1 returns to “H (0V)”. Then, at time m, the transfer signal ϕ1 is changed to “L (−3.3 V)”again. The transfer signal ϕ2 is also a signal set to “H (0 V)” or “L(−3.3 V)”. The transfer signal ϕ2 is “H (0 V)” at time a, and is changedto “L (−3.3 V)” at time h. Then, at time n, the transfer signal ϕ2returns to “H (0 V)”.

After time b, the transfer signals ϕ1 and ϕ2 are alternately changed to“H (0 V)” and “L (−3.3 V)”, with the period during which both thetransfer signals ϕ1 and ϕ2 are set to “L (−3.3 V)” (e.g., the periodfrom time h to time i) interposed therebetween. The period from time bat which the transfer signal ϕ1 is changed from “H (0 V)” to “L (−3.3V)” to time h at which the transfer signal ϕ2 is changed from “H (0 V)”to “L (−3.3 V)” is represented by the period U-1, and the period fromtime h at which the transfer signal ϕ2 is changed from “H (0 V)” to “L(−3.3 V)” to time m at which the transfer signal ϕ1 is changed from “H(0 V)” to “L (−3.3 V)” is represented by the period U-2. The sameapplies to the periods U-3 and U-4.

The turn-on signal ϕI is a signal set to “H (0 V)” or “L (−3.3 V)”. Theturn-on signal ϕI is repeatedly changed to “H (0 V)” and “L (−3.3 V)”during a period within each of the periods U in which one of thetransfer signals ϕ1 and ϕ2 is “H (0 V)” and the other signal is “L (−3.3V)”, for example, during the period from time c to time g within theperiod U-1 or during the period from time j to time l within the periodU-2. The turn-on signal ϕI is “H (0 V)” during the remaining periods.

Next, the time chart of the FIG. 8 will be described with reference toFIG. 1. In FIG. 8, periods during which the laser diodes LD emit lightare represented by solid lines.

At time a, power is supplied to the control unit 20 illustrated in FIG.1, the reference potential Vsub is set to “H (0 V)”, and the powersupply potential Vgk is set to “L (−3.3 V)”. Then, the transfer signalsϕ1 and ϕ2 are set to “H (0 V)”. The cathode of the start diode SD is setto the power supply potential Vgk (“L (−3.3 V)”) via the power supplyline resistor Rg1, and the anode of the start diode SD is set to thetransfer signal ϕ2 “H (0 V)” via the current-limit resistor R2.Accordingly, the start diode SD is forward-biased, and the gate Gt1 ofthe transfer thyristor T1 becomes equal to −1.5 V. Consequently, thethreshold voltage for the transfer thyristor T1 becomes equal to −3 V.

At time b, the transfer signal ϕ1 is changed from “H (0 V)” to “L (−3.3V)”. At this time, since the threshold voltage for the transferthyristor T1 is −3 V, the transfer thyristor T1 is turned on and ischanged from the off-state to the on-state. Then, the gate Gt1 becomesequal to 0 V. Accordingly, the gate Gs1 of the setting thyristors S11 toS14, which are connected to the gate Gt1, becomes equal to −1.5 V. Then,the threshold voltage for the setting thyristors S11 to S14 becomesequal to −3 V. At time b, the turn-on signal ϕI is “H (0 V)”. That is, 0V is applied across a series connection of the setting thyristors S andthe laser diodes LD. Thus, the setting thyristors S are in theoff-state, and the laser diodes LD do not emit light.

At time c, the turn-on signal ϕI is changed from “H (0 V)” to “L (−3.3V)”. Then, the setting thyristors S11 to S14 for which the thresholdvoltage is equal to −3 V are turned on and is changed from the off-stateto the on-state. Then, as described above, current flows through thelaser diodes LD11 to LD14, from which light is emitted. At this time,the cathode-anode voltage of the setting thyristors S11 to S14 becomesequal to 0.8 V, and the cathode-anode voltage of the laser diodes LD11to LD14 becomes equal to 2.5 V. Consequently, the laser diodes LD11 toLD14 are kept emitting light. That is, at time c, the laser diodes LD11to LD14 included in the laser diode LD group #1 emit light concurrently.

At time d, the turn-on signal ϕI is changed from “L (−3.3 V)” to “H (0V)”. Then, the voltage across a series connection of the settingthyristors S and the laser diodes LD is 0 V, resulting in the settingthyristors S11 to S14 being turned off and being changed from theon-state to the off-state. In addition, the laser diodes LD11 to LD14are unlit. That is, at time d, the laser diodes LD11 to LD14 included inthe laser diode LD group #1 do not emit light concurrently. However, thethreshold voltage for the setting thyristors S11 to S14 is kept at −3 V.

Thus, at time e, the turn-on signal ϕI is changed from “H (0 V)” to “L(−3.3 V)”. Then, the setting thyristors S11 to S14 for which thethreshold voltage is equal to −3 V are turned on again and is changedfrom the off-state to the on-state. As a result, the laser diodes LD11to LD14 emit light.

At time f, the turn-on signal ϕI is changed from “L (−3.3 V)” to “H (0V)”. Then, the setting thyristors S11 to S14 are turned off again and ischanged from the on-state to the off-state. As a result, the laserdiodes LD11 to LD14 are unlit.

That is, in the period U-1 from time b at which the transfer signal ϕ1is changed from “H (0 V)” to “L (−3.3 V)” to time h at which thetransfer signal ϕ2 is changed from “H (0 V)” to “L (−3.3 V)”, theturn-on signal ϕ1 is repeatedly changed from “H (0 V)” to “L (−3.3 V)”and then from “L (−3.3 V)” to “H (0 V)”. Accordingly, the laser diodesLD11 to LD14 included in the laser diode LD group #1 emit lightconcurrently in a pulsed manner (intermittently). In the period U-1,four light pulses are emitted.

Likewise, in the period U-2 from time h to time m, the laser diodes LD21to LD24 included in the laser diode LD group #2 emit light concurrentlyas three pulses. In the period U-3 from time m to time o, the laserdiodes LD31 to LD34 included in the laser diode LD group #3 emit lightconcurrently as three pulses. The light emission duration per pulse inthe period U-3 is set longer than in the periods U-1 and U-2. In theperiod U-4 from time o to time r, the laser diodes LD41 to LD44 includedin the laser diode LD group #4 emit light concurrently as five pulses.The light emission duration per pulse in the period U-4 is set shorterthan in the periods U-1 and U-2.

In the foregoing description, a plurality of light pulses are emitted inthe periods U. Alternatively, a single light pulse may be emitted. Inthe periods U, furthermore, if the turn-on signal ϕ1 is kept at “H (0V)”, the voltage across a series connection of the setting thyristors Sand the laser diodes LD is kept at 0 V. Consequently, the laser diodesLD do not emit light. That is, the laser diodes LD may be kept unlit ina predetermined period U.

As described above, allowing the plurality of laser diodes LD includedin each of the laser diode LD groups to emit light concurrently preventsdeterioration of the light emission characteristics of the laser diodesLD such as impairment of the uniformity of light emission, distortion ofthe light-emission profiles, and the increase in divergence angle, whichmay be caused by increasing the sizes of the light-emitting points toincrease optical output.

FIGS. 9A to 9C illustrate arrangements of laser diodes LD included ineach laser diode LD group. FIG. 9A illustrates a y-direction arrangementof the laser diodes LD, FIG. 9B illustrates a diagonal arrangement ofthe laser diodes LD relative to the x direction and the y direction, andFIG. 9C illustrates a triangular arrangement of the laser diodes LD. InFIGS. 9A to 9C, the x direction and the y direction are defined in thesame way as that in FIG. 2.

FIGS. 9A to 9C illustrate the laser diode LD group #1 including thelaser diode LD11/setting thyristor S11 (LD/S11), the laser diodeLD12/setting thyristor S12 (LD/S12), and the laser diode LD13/settingthyristor S13 (LD/S13), by way of example. The other laser diode groupsmay be arranged in parallel with the laser diode LD group #1.Alternatively, the laser diodes LD included in each of the laser diodeLD groups may be arranged in a different way.

Second Exemplary Embodiment

Light-Emitting Device 10

In the light-emitting device 10 according to the first exemplaryembodiment, as illustrated in FIGS. 3 and 4, the setting thyristor S andthe laser diode LD are stacked on the substrate 80 in this order, frombottom to top, starting with the substrate 80. In the light-emittingdevice 10 according to a second exemplary embodiment, the laser diode LDand the setting thyristor S are stacked on the substrate 80 in thisorder, from bottom to top, starting with the substrate 80.

FIG. 10 is an equivalent circuit diagram of the light-emitting device 10according to the second exemplary embodiment. The setting thyristor Sand the laser diode LD are connected in reverse order to that in thelight-emitting device 10 according to the first exemplary embodimentillustrated in FIG. 1. That is, the anodes of the laser diodes LD areconnected to the reference potential, and the cathodes of the laserdiodes LD are connected to the anodes of the setting thyristors S. Thecathodes of the setting thyristors S are connected to the turn-on signalline 75. The other configuration is similar to that in the firstexemplary embodiment and will not be described herein. The transfer unit101 is divided into a transfer unit 101A including the transferthyristors T, the coupling diodes D, the power supply line resistors Rg,the start diode SD, and the current-limit resistors R1 and R2, and atransfer unit 101B including the setting thyristors S.

Plan View Layout of Light-Emitting Device 10

FIG. 11 illustrates an example of a plan view layout of thelight-emitting device 10 according to the second exemplary embodiment.In FIG. 11, a direction extending rightward is defined as the xdirection, and a direction extending upward is defined as the ydirection. The x direction is the same direction as the x direction inFIG. 1.

The following mainly describes a difference from the plan view layout ofthe light-emitting device 10 according to the first exemplary embodimentillustrated in FIG. 2.

In the light-emitting device 10 according to the second exemplaryembodiment, as illustrated in FIG. 11, the islands 301 according to thefirst exemplary embodiment illustrated in FIG. 2 are separated intoislands 301A where the laser diode LD groups are disposed and islands301B where the transfer thyristors T and the coupling diodes D aredisposed. The islands 301A are arrays of posts 311, each of which isformed into a cylindrical shape in accordance with the outer appearanceof the laser diode LD. Each of the posts 311 is formed by stacking thelaser diode LD and the setting thyristor S on top of each other.

The posts 311 included in the laser diode LD groups are configured suchthat portions of opposing posts 311 are continuous with each other inthe y direction.

Cross-Sectional Structure of Light-Emitting Device 10

FIG. 12 is a cross-sectional view of the light-emitting device 10, takenalong line XII-XII of FIG. 11. In FIG. 12, a direction extendingleftward is defined as the y direction. That is, the cross-sectionalview illustrated in FIG. 12 is a cross-sectional view of the islands301B-1 and 301A-1. In FIG. 12, the coupling diode D1, the transferthyristor T1, the laser diode LD11/setting thyristor S11 (LD/S11), andthe laser diode LD12/setting thyristor S12 (LD/S12) are illustrated fromthe left to the right. The laser diode LD13/setting thyristor S13(LD/S13) and the laser diode LD14/setting thyristor S14 (LD/S14) aredisposed to the right of the laser diode LD12/setting thyristor S12(LD/S12), which are not illustrated in FIG. 12.

First, the island 301A-1 in which the setting thyristor S and the laserdiode LD are stacked on top of each other will be described. Asillustrated in FIG. 12, conversely to FIG. 3, on the p-type GaAssubstrate 80, layers forming the laser diode LD are stacked on top ofeach other, which include the p-anode layer 86, the light-emitting layer87, and the n-cathode layer 88.

On top of the n-cathode layer 88, the tunnel junction layer 85 isstacked.

Further, layers forming the setting thyristor S are stacked on top ofeach other, which include the p-anode layer 81, the voltage reductionlayer 89, the n-gate layer 82, the p-gate layer 83, and the n-cathodelayer 84.

In a center portion of the post 311, the n-cathode layer 84, the p-gatelayer 83, the n-gate layer 82, the voltage reduction layer 89, thep-anode layer 81, and the tunnel junction layer 85 are removed byetching so that the n-cathode layer 88 is exposed. Consequently, then-cathode layer 88 of the laser diode LD is exposed. The exposed portionof the n-cathode layer 88 serves as the light exit opening 310 in thelaser diode LD.

That is, the post 311 is configured such that the tunnel junction layer85, the p-anode layer 81, the voltage reduction layer 89, the n-gatelayer 82, the p-gate layer 83, and the n-cathode layer 84 are left toform the setting thyristor S in such a manner as to surround the lightexit opening 310 in the laser diode LD. As illustrated in FIG. 11, amulti-layer semiconductor body is provided so that portions of the posts311 are continuous with one another in plan view.

With this configuration, when the current constriction layer 86 bincluded in the p-anode layer 86 is oxidized from the circumferentialportion of the post 311 formed into a cylindrical shape, oxidationprogresses from the circumferential portion toward the center portion.Consequently, a current-passing area α having a circular cross sectionis formed.

In the post 311, the n-ohmic electrode 321, which is the cathodeelectrode, is disposed on top of the n-cathode layer 84. The n-ohmicelectrode 321 is connected to the turn-on signal line 75 via athrough-hole formed in the interlayer insulating layer 91.

Furthermore, a multi-layer semiconductor body is provided so thatportions of the posts 311 are continuous with one another in plan view.This configuration allows the n-gate layers 82 and the p-gate layers 83of all the setting thyristors S included in the laser diode LD group tobe connected, which eliminates a need to dispose a line for each of thelaser diodes LD to control the setting thyristor S. The portions of theposts 311 that are continuous with one another (indicated by y) may beconnected in either the p-gate layer 83 or the n-gate layer 82. In ananode-grounded configuration illustrated in FIG. 12, the portions may beconnected in the n-gate layer 82.

The multi-layer semiconductor body provided so that portions of theposts 311 are continuous with one another may have a width that allowsthe current-passing area α to be formed so that the light emissioncharacteristics of the laser diodes LD do not deteriorate when thecurrent constriction layer 86 b is oxidized.

In FIG. 12, the island 301A-1 is provided with, at the left edgethereof, a p-ohmic electrode 335 on the p-gate layer 83 that is exposedby removing the n-cathode layer 84. The p-ohmic electrode 335 isconnected to a line 78 via a through-hole formed in the interlayerinsulating layer 91.

Next, the island 301B-1 will be described.

The island 301B-1 is provided with a p-ohmic electrode 336 over thep-gate layer 83, which is exposed in a portion facing the island 301A-1.The p-ohmic electrode 336 is connected to the line 78 via a through-holeformed in the interlayer insulating layer 91. With this configuration,when the transfer thyristor T1 is turned on and the gate Gt1 becomesequal to 0 V, the gate Gs of the setting thyristors S in the island301A-1 becomes equal to 0 V via the line 78. That is, the on-state ofthe transfer thyristor T1 is transmitted to the setting thyristors S.

In the island 301B-1, as illustrated in a left portion of FIG. 12, thep-anode layer 81 is exposed. The exposed p-anode layer 81 and thesubstrate 80 are connected via a line 79. The line 79 may be formed ofthe same material as that of the p-ohmic electrode 331 and the like.

The islands 301B-1, 301B-2, 301B-3, . . . , 302, 303, 304, and 305 maybe formed by etching the layers up to the p-anode layer 81 andconnecting the exposed p-anode layer 81 to the substrate 80 using theline 79. This configuration eliminates a need to dispose a line for eachisland (the islands 301B-1, 301B-2, 301B-3, . . . , 302, 303, 304, and305) (see FIG. 11).

FIG. 13 is a cross-sectional view of the light-emitting device 10, takenalong line XIII-XIII of FIG. 11. In FIG. 13, a direction extendingrightward is defined as the x direction. That is, the cross-sectionalview illustrated in FIG. 13 is a cross-sectional view of the islands301A-1, 301A-2, 301A-3, and 301A-4. In the island 301A-1, the laserdiode LD11/setting thyristor S11 (LD/S11) included in the laser diode LDgroup #1 are illustrated. In the island 301A-2, the laser diodeLD21/setting thyristor S21 (LD/S21) included in the laser diode LD group#2 are illustrated. In the island 301A-3, the laser diode LD31/settingthyristor S31 (LD/S31) included in the laser diode LD group #3 areillustrated. In the island 301A-4, the laser diode LD41/settingthyristor S41 (LD/S41) included in the laser diode LD group #4 areillustrated.

As illustrated in FIG. 13, in the cross section taken along lineXIII-XIII of FIG. 11, around the islands 301A, the n-cathode layer 84,the p-gate layer 83, the n-gate layer 82, the voltage reduction layer89, the p-anode layer 81, the tunnel junction layer 85, the n-cathodelayer 88, the light-emitting layer 87, and the p-anode layer 86 areremoved up to the substrate 80. With this configuration, the laserdiodes LD are separated in the islands 301A, 301B, and so on.

The material of the voltage reduction layer 89 is more difficult to growand is lower in quality than GaAs, InP, and the like. Thus, a defect ismore likely to occur in the voltage reduction layer 89, and the defectis extended in a semiconductor grown on the voltage reduction layer 89,such as GaAs.

The light emission characteristics of light-emitting elements such asthe laser diodes LD are likely to be affected by a defect included inthe semiconductor layers. In contrast, it is desirable that thethyristors (the setting thyristors S and the transfer thyristors T) beturned on to supply current to the laser diodes LD. Thus, if thyristorsincluding the voltage reduction layer 89 are not used as alight-emitting layer, but are used to reduce voltage, a semiconductorlayer of the thyristors may include a defect.

In the second exemplary embodiment, accordingly, the laser diodes LD aredisposed on top of the substrate 80, and the transfer thyristors T andthe setting thyristors S, which include the voltage reduction layer 89,are disposed on top of the laser diodes LD. This configuration mayprevent the generation of a defect in the laser diodes LD, and the lightemission characteristics are less likely to be affected by any defect.In addition, the transfer thyristors T and the setting thyristors S maybe monolithically stacked.

In portions where the transfer thyristors T are disposed on top of thesemiconductor layers forming the laser diodes LD (the p-anode layer 86,the light-emitting layer 87, and the n-cathode layer 88), the p-anodelayer 86, the light-emitting layer 87, and the n-cathode layer 88 areshort-circuited by the line 79 so as not to activate the laser diodesLD.

The other configuration, production method, and operation of thelight-emitting device 10 according to the second exemplary embodimentare similar to those according to the first exemplary embodiment andwill not be described herein.

Third Exemplary Embodiment

An optical apparatus 30 according to a third exemplary embodimentincludes the light-emitting device 10 described above in the firstexemplary embodiment and the second exemplary embodiment.

Optical Apparatus 30

FIG. 14 illustrates the optical apparatus 30 according to the thirdexemplary embodiment. In FIG. 14, a direction extending rightward isdefined as the x direction, and a direction extending upward is definedas the y direction.

The optical apparatus 30 includes the light-emitting device 10 and anoptical element. The light-emitting device 10 includes a light-emittingunit 102, and the light-emitting unit 102 includes nine laser diode LDgroups (laser diode LD groups #1 to #9) arranged one-dimensionally inthe x direction. The details of the transfer unit 101 are notillustrated. The laser diodes LD included in each of the laser diode LDgroups each include an optical element that changes the direction ordivergence angle of light emitted from the associated laser diode LD. Inthe following, by way of example, each optical element is described as aconvex lens (hereinafter referred to as lens LZ) configured to deflectthe light emission direction to a predetermined direction. For example,as illustrated in FIG. 14, in the laser diode LD group #1, each of thelenses LZ is arranged in such a manner that the center C of the lens LZis shifted from the center O of the light exit opening 310 in the laserdiode LD in the x direction so that light emitted from the laser diodeLD can be deflected in the x direction. The directions of arrowsillustrated in the bottom row in FIG. 14 indicate the directions inwhich the centers C of the lenses LZ are shifted from the centers O ofthe light exit openings 310 in the laser diodes LD.

In the laser diode LD group #2, each of the lenses LZ is arranged insuch a manner that the center C of the lens LZ coincides with the centerO of the light exit opening 310 in the laser diode LD so that lightemitted from the laser diode LD is not deflected. In the laser diode LDgroup #3, conversely to the laser diode LD group #1, each of the lensesLZ is arranged in such a manner that the center C of the lens LZ isshifted from the center O of the light exit opening 310 in the negative(−) x direction so that light emitted from the laser diode LD can bedeflected in the negative (−) x direction. Likewise, each of the lensesLZ in the laser diode LD group #4 is arranged to provide the deflectionof the light beam in the x direction and the y direction; each of thelenses LZ in the laser diode LD group #5 is arranged to provide thedeflection of the light beam in the y direction; each of the lenses LZin the laser diode LD group #6 is arranged to provide the deflection ofthe light beam in the negative (−) x direction and the y direction; eachof the lenses LZ in the laser diode LD group #7 is arranged to providethe deflection of the light beam in the x direction and the negative (−)y direction; each of the lenses LZ in the laser diode LD group #8 isarranged to provide the deflection of the light beam in the negative (−)y direction; and each of the lenses LZ in the laser diode LD group #9 isarranged to provide the deflection of the light beam in the negative (−)x direction and the negative (−) y direction.

When the lenses LZ are small lenses such as microlens, the angles ofdeflection may be small. In this case, another lens may be disposed infront of the optical apparatus 30 including the lenses LZ to increasethe angles of deflection. While the lenses LZ are described as convexlenses, the lenses LZ may be concave lenses or aspheric lenses.

In the foregoing description, the light emission direction is deflected.Alternatively, the divergence angle may be changed. For example, aconvex lens may be used to make the light beam converge on an irradiatedsurface or make the light beam diverge such that light can be applied toa predetermined area on the irradiated surface.

Optical Measurement Apparatus 1

FIG. 15 illustrates an optical measurement apparatus 1 including theoptical apparatus 30. The optical measurement apparatus 1 includes theoptical apparatus 30, a light-receiving unit 11 that receives light, anda processing unit 12 that processes data. A measurement object (object)13 moves close to the optical measurement apparatus 1. The measurementobject 13 is a person, for example, who is viewed from above in FIG. 15.

The light-receiving unit 11 is a device that receives light reflectedfrom the measurement object 13. The light-receiving unit 11 may be aphotodiode. The photodiode is, for example, a single photon avalanchediode (SPAD) that enables accurate measurement of the light receivingtime.

The processing unit 12 is configured as a computer including aninput/output unit that receives and outputs data. The processing unit 12processes information concerning light to calculate the distance to themeasurement object 13 or calculate the two-dimensional orthree-dimensional shape of the measurement object 13.

The processing unit 12 of the optical measurement apparatus 1 controlsthe light-emitting device 10 of the optical apparatus 30 to emit lightfrom the light-emitting device 10. That is, the light-emitting device 10of the optical apparatus 30 emits light in a pulsed manner. Theprocessing unit 12 determines a time difference between the time atwhich the light-emitting device 10 emits light and the time at which thelight-receiving unit 11 receives light reflected from the measurementobject 13 to calculate, based on the time difference, the length of thepath of light emitted from the optical apparatus 30 and reaching thelight-receiving unit 11 after being reflected from the measurementobject 13. Accordingly, the processing unit 12 measures the distance tothe measurement object 13 from the optical apparatus 30 or thelight-receiving unit 11 or the distance to the measurement object 13from a point used as a reference (hereinafter referred to as referencepoint). The reference point is a point at a position a predetermineddistance away from the optical apparatus 30 and the light-receiving unit11.

FIG. 16 illustrates how light beams are emitted from the opticalmeasurement apparatus 1. In the illustrated example, the presence of anobject ahead of a person 14 is detected by the optical measurementapparatus 1 that the person 14 is holding in their right hand.

As described above, light beams from the laser diode LD group #1 of thelight-emitting device 10 in the optical apparatus 30 are directed towardan area @1 on a virtually set irradiated surface 15. Also, light beamsfrom the laser diode LD group #2 are directed toward an area @2. Thatlight beams are sequentially emitted from the laser diode LD groups #1to #9 to different areas @1 to @9. The light-receiving unit 11 receivesreflected light beams. The processing unit 12 measures the time takenfrom emission of a light beam to reception of the reflected light beamby the light-receiving unit 11. Accordingly, the person 14 is able toknow in which direction the measurement object 13 is located. That is,the optical measurement apparatus 1 serves as a proximity sensor.Additionally, based on the distance to the measurement object 13, thetwo-dimensional or three-dimensional shape of the measurement object 13is measured.

The method described above is a measurement method based on the arrivaltime of light, called a time-of-flight (TOF) method. In this method, itis desirable to radiate pulsed light a plurality of times to enhancemeasurement accuracy. Accordingly, as illustrated in the time chart inFIG. 8, it is desirable to irradiate pulsed light a plurality of timesin each of the periods U during which the predetermined laser diode LDgroups in the light-emitting device 10 are caused to emit light. Inaddition, the number of pulses to be emitted in a specific direction,for example, the area @2 in front of the person 14 in FIG. 16, may beincreased to increase measurement accuracy. That is, the period U duringwhich the area @2 is irradiated with light may be made longer than theother periods U to increase the number of pulses.

The optical apparatus 30 is configured to sequentially emit light beamsin a predetermined direction. This configuration allows the opticalapparatus 30 to consume less power than a configuration forsimultaneously emitting light beams in many directions, although theoptical apparatus 30 has lower resolution. To simultaneously emit lightbeams in many directions, two-dimensionally arranged light-receivingelements are used to identify the direction in which the reflected lightbeams come. Compared to this configuration, the optical measurementapparatus 1, which is configured to sequentially emit light beams inchanging directions, does not require two-dimensionally arrangedlight-receiving elements. It is only required to use light-receivingelements capable of quickly measuring changes in the intensity ofreceived light. Thus, the optical measurement apparatus 1 has a simpleconfiguration.

The light-emitting device 10 in the optical apparatus 30 illustrated inFIG. 14 includes the nine laser diode LD groups #1 to #9. As illustratedin FIG. 16, the 3×3, nine areas @1 to @9 are irradiated with light. Toincrease the number of areas, the number of laser diode LD groups thatare arranged may be changed. To irradiate 5×5, 25 areas @1 to @25 withlight, 25 laser diode LD groups may be used. Alternatively, 5×4 or 4×5,20 areas may be used. While the laser diode LD groups are arrangedone-dimensionally, the laser diode LD groups may be arrangedtwo-dimensionally. The areas to be irradiated with light may notnecessarily be arranged in a lattice. Optical elements such as thelenses LZ may be set so as to set the directions in which light beamsare emitted from the laser diodes LD of the light-emitting device 10 inthe optical apparatus 30 to apply the light beams to the locations to bemeasured.

Image Forming Apparatus 2

The optical apparatus 30 described above may be used in an image formingapparatus that forms an image.

FIG. 17 illustrates an image forming apparatus 2 including the opticalapparatus 30.

The image forming apparatus 2 includes the optical apparatus 30, a drivecontrol unit 16, and a screen 17 that receives light.

The operation of the image forming apparatus 2 will be described.

As described above, the light-emitting device 10 in the opticalapparatus 30 causes the laser diode LD groups to sequentially emitlight. Thus, the optical apparatus 30 applies light two-dimensionally.The emission or non-emission of light and the light emission durationare controlled by the turn-on signal ϕI. The drive control unit 16receives an image signal, controls, based on the image signal, theemission or non-emission of light from the light-emitting device 10 toform a two-dimensional image, and drives the optical apparatus 30.Accordingly, a two-dimensional image is obtained. The obtainedtwo-dimensional still image or moving image is projected onto the screen17.

That is, the optical apparatus 30 described in the third exemplaryembodiment sequentially drives the laser diode LD groups in thelight-emitting device 10 along the array to apply light over a surface.That is, a one-dimensional operation is performed to apply lighttwo-dimensionally.

In the light-emitting device 10 in the optical apparatus 30 according tothe third exemplary embodiment, each of the laser diode LD groups, whichare an example of light-emitting element groups, includes the laserdiodes LD, which are an example of a plurality of light-emittingelements. Alternatively, each light-emitting element group may include asingle light-emitting element. That is, the light-emitting device 10 maybe configured to sequentially control the emission or non-emission oflight from the single light-emitting elements.

The laser diodes LD are controlled in terms of emission or non-emissionof light. Alternatively, the light emission intensity in thelight-emitting state may be increased.

In the light-emitting device 10 according to the first to thirdexemplary embodiments, the transfer unit 101, such as the transferthyristors T, is used to sequentially control the emission ornon-emission of light from the laser diode LD groups, which are anexample of light-emitting element groups. Alternatively, any othermethod may be used to sequentially control the emission or non-emissionof light from the laser diode LD groups, which are an example oflight-emitting element groups.

In the exemplary embodiments described above, the light-emitting device10 has an anode-grounded configuration in which anodes are set atreference potential. Alternatively, a cathode-grounded configuration inwhich cathodes are set at reference potential may be used.

The foregoing description of the exemplary embodiments of the presentdisclosure has been provided for the purposes of illustration anddescription. It is not intended to be exhaustive or to limit thedisclosure to the precise forms disclosed. Obviously, many modificationsand variations will be apparent to practitioners skilled in the art. Theembodiments were chosen and described in order to best explain theprinciples of the disclosure and its practical applications, therebyenabling others skilled in the art to understand the disclosure forvarious embodiments and with the various modifications as are suited tothe particular use contemplated. It is intended that the scope of thedisclosure be defined by the following claims and their equivalents.

What is claimed:
 1. A light-emitting device comprising a light-emittingunit including an array of a plurality of light-emitting element groups,each including a plurality of light-emitting elements, wherein in thelight-emitting unit, the plurality of light-emitting element groups aresequentially driven along the array such that, for each of the pluralityof light-emitting element groups, the plurality of light-emittingelements included in the light-emitting element group are concurrentlyset to a state of emitting light or a state of not emitting light,wherein the plurality of light-emitting elements included in theplurality of light-emitting element groups are connected to settingelements, each of the setting elements being connected to acorresponding one of the plurality of light-emitting elements and beingturned on to set the corresponding one of the plurality oflight-emitting elements to be capable of emitting light or emittinglight of increased intensity.
 2. The light-emitting device according toclaim 1, wherein the setting elements comprise thyristors including ananode layer, a first gate layer, a second gate layer, and a cathodelayer, and wherein the setting elements connected to the plurality oflight-emitting elements included in each of the plurality oflight-emitting element groups are configured such that at least one ofthe first gate layer or the second gate layer is continuous across theplurality of light-emitting elements.
 3. The light-emitting deviceaccording to claim 1, further comprising a turn-on signal line disposedin common to the plurality of light-emitting element groups, wherein theplurality of light-emitting elements in each of the plurality oflight-emitting element groups, which are set by the corresponding onesof the setting elements to be capable of emitting light or emittinglight of increased intensity, are caused to continuously orintermittently emit light or emit light of increased intensity by aturn-on signal supplied through the turn-on signal line.
 4. Thelight-emitting device according to claim 1, wherein each of theplurality of light-emitting elements and the corresponding one of thesetting elements are stacked on top of each other with a tunnel junctiontherebetween.
 5. The light-emitting device according to claim 2, whereineach of the plurality of light-emitting elements and the correspondingone of the setting elements are stacked on top of each other with atunnel junction therebetween.
 6. The light-emitting device according toclaim 1, further comprising a transfer unit that sequentially sets theplurality of light-emitting element groups to a turn-on state or aturn-off state one after another such that the plurality oflight-emitting elements in each of the plurality of light-emittingelement groups are set to the turn-on state or the turn-off state. 7.The light-emitting device according to claim 6, wherein the transferunit includes a plurality of transfer elements, each disposed for acorresponding one of the plurality of light-emitting element groups, andwherein the plurality of transfer elements are sequentially turned onone after another to set the plurality of light-emitting elements in thecorresponding one of the plurality of light-emitting element groups thatis connected to a turned-on transfer element among the plurality oftransfer elements to be capable of emitting light or emitting light ofincreased intensity.
 8. An optical apparatus comprising: thelight-emitting device according to claim 1; and an optical element thatsets directions or divergence angles of light beams emitted from theplurality of light-emitting element groups included in thelight-emitting device to a predetermined direction or a predetermineddivergence angle.
 9. The optical apparatus according to claim 8, whereinthe optical element sets the directions or divergence angles of thelight beams emitted from the plurality of light-emitting element groupsto be different from each other.
 10. An optical measurement apparatuscomprising: the optical apparatus according to claim 9; alight-receiving unit that receives light reflected from an objectirradiated with light from the optical apparatus; and a processing unitthat processes information concerning the light received by thelight-receiving unit to measure a distance from the optical apparatus tothe object or measure a shape of the object.
 11. An image formingapparatus comprising: the optical apparatus according to claim 8; and adrive control unit that receives an image signal and drives the opticalapparatus, based on the image signal, to form a two-dimensional imageusing light emitted from the optical apparatus.
 12. The light-emittingdevice according to claim 1, wherein the plurality of light-emittingelements are formed on a same substrate.
 13. The light-emitting deviceaccording to claim 1, wherein the light-emitting device ismonolithically stacked.